产品分类：MOSFET晶体管,规格：功耗 Pd 800mW,
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, 5.2 A, -12 V, 0.026 ohm, -4.5 V, -0.55 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.093 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 2.9 ohm, 4 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.158 ohm, -10 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -30 V, 0.195 ohm, -4.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V V(BR)DSS
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.9 A, -30 V, 0.036 ohm, -10 V, -2.2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV
(EN)RENESAS
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.082 ohm, 10 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.028 ohm, -4.5 V, -300 mV
(EN)DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, PNP + N MOSFET, 224 mA, 20 V, 0.65 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)
