产品分类：MOSFET晶体管,规格：功耗 Pd -,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 通道, 40V, 100A, PQFN-8
(EN)
DIODES INC.
Dual MOSFET, N and P Complement, 3.8 A, 30 V, 0.034 ohm, 10 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00095 ohm, 10 V, 3.9 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 5 A, 60 V, 0.03 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
MICROCHIP
场效应管, MOSFET, N沟道与P沟道, 200V, NSOIC-8
(EN)
STMICROELECTRONICS
单晶体管 双极, N沟道, 5 A, 70 V, 0.2 ohm, 10 V, 55 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)
SEMIKRON
单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V
(EN)
SEMIKRON
单晶体管 双极, 增强模式, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 3.3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 17.2A, 30V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 8.3A, 100V SOIC-8
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0021 ohm, 10 V, 4 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00168 ohm, 10 V, 4 V
(EN)
SEMELAB
双路场效应管, MOSFET, N和P沟道, 8 A, 160 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00095 ohm, 10 V, 3.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
(EN)
