产品分类：MOSFET晶体管,规格：晶体管封装类型 SOT-223,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 120 mohm, 5 V, 1.68 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.89 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 800 V, 15.5 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 190 mA, 800 V, 15 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
