产品分类：MOSFET晶体管,规格：晶体管封装类型 TO-263,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9 A, 40 V, 0.019 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.15 ohm, 10 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 2 A, 1.5 kV, 10 ohm, 10 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 6.2A D2-PAK
(EN)
VISHAY
MOSFET, N CHANNEL, 650V, 24A, TO-263-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9 A, 40 V, 0.019 ohm, 10 V, 1.7 V
(EN)
