
INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 21 mohm, 4.5 V, 0.9 V

TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV

VISHAY
晶体管, MOSFET, 汽车, N沟道, 32 A, 100 V, 0.021 ohm, 10 V, 3 V

VISHAY
场效应管, MOSFET, P沟道, -3A, -12V, 750mW

INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V

VISHAY
场效应管, P通道, MOSFET

VISHAY
场效应管, P通道, MOSFET

INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 1 V

VISHAY
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.019 ohm, 10 V, 2 V

VISHAY
场效应管, MOSFET, N沟道

VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V

VISHAY
场效应管, MOSFET, N沟道, 3A, 40V, 750mW

VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 60 V, 0.021 ohm, 10 V, 1.5 V

INFINEON
晶体管, MOSFET, N沟道, 429 A, 24 V, 800 μohm, 10 V, 2 V

DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V

DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V

INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1mA

INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV

VISHAY
晶体管, MOSFET, N沟道, 85 A, 30 V, 0.003 ohm, 10 V, 1 V

INFINEON
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V
