
INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.14 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.225 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V

VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.01 ohm, -10 V, -1.5 V

VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 1 V

INFINEON
晶体管, MOSFET, N沟道, 140 A, 55 V, 0.008 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -2 V

VISHAY
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW

INFINEON
场效应管阵列, MOSFET, 双P沟道, -30V, -2.3A, 6-PQFN

INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV

VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0064 ohm, 10 V, 2 V

NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 55 V, 3.3 mohm, 10 V, 2.3 V

INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 45 mohm, 10 V, 2 V

NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 55 V, 16 mohm, 10 V, 2.3 V

INFINEON
场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN

INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 84 A, 30 V, 0.0053 ohm, 10 V, 2 V

VISHAY
场效应管, MOSFET, N沟道, 3.2A, 60V, 2W

VISHAY
场效应管, MOSFET, N沟道