
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V

VISHAY
晶体管, MOSFET, P沟道, 2.8 A, -100 V, 1.2 ohm, -10 V, 4 V

TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 20 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 24.5 mohm, 10 V, 4 V

ON SEMICONDUCTOR
场效应管, MOSFET, N+P沟道, 30V, SC-88

WOLFSPEED
功率场效应管, MOSFET, N沟道, 11.5 A, 900 V, 0.28 ohm, 15 V, 2.1 V

INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V

INFINEON
晶体管, MOSFET, P沟道, -40 A, -100 V, 60 mohm, -10 V, -4 V

NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00112 ohm, 10 V, 1.7 V

VISHAY
晶体管, P沟道

VISHAY
晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0078 ohm, 10 V, 5 V

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V

DIODES INC.
双路场效应管, MOSFET, 双N沟道, 305 mA, 50 V, 2 ohm, 5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 23.5 A, 600 V, 240 mohm, 10 V, 5 V

SEMELAB
晶体管, MOSFET, P沟道, 8 A, -160 V, 1.5 ohm, -1.5 V

INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V

INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 12A, TO-220AB

VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V

ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -8V, SC-88

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V

VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W