产品分类：MOSFET晶体管,
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-247AC-3
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 70 V, 130 mohm, 10 V, 1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-220AB
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.044 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 135 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.5 A, -20 V, 0.026 ohm, -4.5 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 20 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, 40A, POWERPAIR-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)
