
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V

TOSHIBA
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V

SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V

VISHAY
场效应管, MOSFET, N沟道, 20V, 50A, SOIC

VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -10 V, -3 V

INFINEON
晶体管, MOSFET, N沟道, 56 A, 250 V, 0.0145 ohm, 10 V, 5 V

NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00179 ohm, 10 V, 1.7 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V

DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 190 mohm, -10 V, -1.6 V

VISHAY
功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 3.5 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0115 ohm, 10 V, 2.85 V

VISHAY
晶体管, MOSFET, P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -3 V

TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, TO-220-3