
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-247AC-3

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V

INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 车用, 55V, 49A, TO-220AB

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V

VISHAY
场效应管, MOSFET, N沟道

VISHAY
MOSFET, P CHANNEL, -50V, -9.9A, TO-252-3

INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-247AC

INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.0046OHM, 80A, TO-263AB-3

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 650 V, 0.036 ohm, 10 V, 5 V

INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 58A, 100V

INFINEON
晶体管, MOSFET, N沟道, 69 A, 100 V, 0.0099 ohm, 10 V, 1.84 V

NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V

INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V

INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 120A, D2PAK

VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, SOIC

TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 3.7A, MICROFET 2X2

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 43A, TO-220AB

INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 18A, D-PAK