产品分类：MOSFET晶体管,
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00085 ohm, 10 V, 1.41 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -20 A, -20 V, 0.0199 ohm, -4.5 V, -850 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 1.03 A, 20 V, 0.3 ohm, 5 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 1.5A, TSOP
(EN)
