VISHAY

晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V

ROHM

晶体管, MOSFET, N沟道, 500 mA, 60 V, 7.5 ohm, 10 V, 1.85 V

VISHAY

MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3

NEXPERIA

晶体管, MOSFET, D-MOS, P沟道, -210 mA, -300 V, 17 ohm, -10 V, -2.8 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V

MULTICOMP

场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3

INFINEON

晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V

NEXPERIA

晶体管, MOSFET, P沟道, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV

INFINEON

晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0053 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET , 30V, 6.3A, N通道*NIC*

VISHAY

场效应管, MOSFET, P沟道, -30V, 4A, TO-236

VISHAY

晶体管, MOSFET, N沟道, 1.5 A, 400 V, 3.6 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V

STMICROELECTRONICS

双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 30V, 1.7A

ROHM

晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V

ROHM

晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V

VISHAY

功率场效应管, MOSFET, N沟道, 7.9 A, 650 V, 0.52 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V