
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V

INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.25 ohm, 10 V, 1 V

NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP

VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 60V, 1.6OHM, 280mA, SOT-563F-6

VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V

VISHAY
晶体管, MOSFET, P沟道, -9.2 A, -8 V, 0.02 ohm, -4.5 V, -400 mV

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V

PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V

INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V

NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.063 ohm, -4.5 V, -1.3 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V

VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC

INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 2.8 ohm, 10 V, 4 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V

VISHAY
MOSFET, P-CH, -40V, -30A, POWERPAK SO

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V

TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V