
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 870 mA, 20 V, 0.3 ohm, 4.5 V, 1 V

VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.165 ohm, -4 V, -1.3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET

ON SEMICONDUCTOR
晶体管, MOSFET, N和P沟道, 8 V, 0.04 ohm, 4.5 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 60 V, 16 mohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.25 ohm, 4.5 V, 700 mV

DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV

VISHAY
场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK

INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.89 ohm, 10 V, 3 V

INFINEON
双路场效应管, MOSFET, 双P沟道, 4.9 A, -30 V, 58 mohm, -10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 30V V(BR)DSS

INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V

NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 80 V, 8300 μohm, 5 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.8 A, 80 V, 16.5 mohm, 10 V, 3.2 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V

INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V

VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V

VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 100 V, 0.044 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0081OHM, 22A, POWER 56-8

ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, 双N沟道, 7.6 A, 30 V, 0.022 ohm, 10 V, 1 V

VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V

INFINEON
场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC