VISHAY

MOSFET, N CHANNEL, 20V, 600mA, SOT-416-3

NEXPERIA

晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0135 ohm, 10 V, 1.66 V

INFINEON

晶体管, MOSFET, N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V

TOSHIBA

晶体管, MOSFET, P沟道, 100 mA, -30 V, 12 ohm, -4 V, -1.7 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 12 A, 550 V, 0.3 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, 160W, 3-TO-220

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, 60 V, 40 W, 4 A, 750 hFE

VISHAY

晶体管, MOSFET, P沟道, 3.5 A, -200 V, 1.5 ohm, -10 V, -4 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 150V, 0.0173OHM, 7.5A, SOIC-8

VISHAY

晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, N沟道, 6.9 A, 20 V, 0.013 ohm, 4.5 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0042 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -350 V, 200 MHz, 625 mW, 20 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 16.7 A, 60 V, 0.044 ohm, 10 V, 1.7 V

INFINEON

晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0024 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR

射频双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 300 V, 150 MHz, 7 W, 100 mA, 60 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V

VISHAY

晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 4.6 A, 80 V, 0.077 ohm, 10 V

NEXPERIA

晶体管, MOSFET, N沟道, 34 A, 75 V, 28 mohm, 5 V, 1.5 V

INFINEON

晶体管, MOSFET, N沟道, 61 A, 55 V, 0.0086 ohm, 10 V, 4 V

ON SEMICONDUCTOR

双极晶体管阵列, 双PNP, -30 V, 661 mW, -100 mA, 420 hFE, SOT-563