
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

INFINEON
晶体管, MOSFET, N沟道, 110 mA, 240 V, 7.7 ohm, 10 V, 1.4 V

NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V

ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 1 V

NEXPERIA
单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 200 mW, -100 mA, 220 hFE

NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, PNP, 45 V, 100 MHz, 380 mW, 100 mA, 200 hFE

NEXPERIA
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.33 ohm, -4.5 V, -700 mV

INFINEON
晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 70 hFE

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V

ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 30 V, 0.8 ohm, 4.5 V, 1.5 V

ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 1 kohm, 10 kohm, 0.1 电阻比率

TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV

TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.076 ohm, -10 V, -3 V

ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 32 V, 100 MHz, 225 mW, 800 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 40 V, 30 μA, 90 μA, 1.8 V, SOT-23, JFET

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE

ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 50 V, 380 mW, 200 mA, 200 hFE, SC-74