产品分类：半导体 - 分立器件,规格：电压 @ Rds测量 -10V,
INFINEON
晶体管, MOSFET, P沟道, -170 mA, -60 V, 8 ohm, -10 V, -1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -700 mA, -100 V, 1 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 300 mohm, -10 V, 2.6 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -180 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 56 mohm, -10 V, -1.8 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 125 mohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.6 A, -30 V, 0.024 ohm, -10 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.092 ohm, -10 V, -1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -3 A, -30 V, 0.062 ohm, -10 V, -1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 100 mohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 4.9A
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.024 ohm, -10 V, -1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -3.2 A, -60 V, 0.051 ohm, -10 V, -3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -60 A, -30 V, 0.0045 ohm, -10 V, -2.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -60 A, -30 V, 0.0045 ohm, -10 V, -2.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.5 A, -30 V, 0.071 ohm, -10 V, -1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, 1.17 A, -15 V, 0.18 ohm, -10 V, -1.25 V
(EN)
