产品分类：存储器,规格：针脚数 24引脚,
CYPRESS SEMICONDUCTOR
芯片, 3.0/1.8V, 64MB, HYPERRAM TM DRAM
(EN)CYPRESS SEMICONDUCTOR
芯片, 3.0/1.8V, 64MB, HYPERRAM TM DRAM
(EN)
CYPRESS SEMICONDUCTOR
闪存, 或非, 512 Mbit, 133 MHz, SPI, BGA, 24 引脚
(EN)
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 16K
(EN)CYPRESS SEMICONDUCTOR
芯片, 3.0/1.8V, 64MB, HYPERRAM TM DRAM
(EN)
CYPRESS SEMICONDUCTOR
芯片, 3.0/1.8V, 64MB, HYPERRAM TM DRAM
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 512 Mbit, 133 MHz, SPI, BGA, 24 引脚
(EN)STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 16K
(EN)SPANSION
芯片, 闪存, 或非, 512MB, BGA-24
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 128 Mbit, 133 MHz, SPI, BGA, 24 引脚
(EN)
SPANSION
芯片, 闪存, 或非, 128MB, BGA-24
(EN)
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 200 ns, EDIP
(EN)
STMICROELECTRONICS
芯片, SRAM模块, 16Kb, 内含电池
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 150 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 200 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 100 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 120 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 120 ns, EDIP
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 256 Mbit, 133 MHz, SPI, BGA, 24 引脚
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 150 ns, EDIP
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 32 Mbit, 104 MHz, SPI, BGA, 24 引脚
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 128 Mbit, 16M x 8位, 108 MHz, SPI, BGA, 24 引脚
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 128 Mbit, 16M x 8位, 108 MHz, SPI, BGA, 24 引脚
(EN)CYPRESS SEMICONDUCTOR
闪存, 或非, 256 Mbit, 32M x 8位, 133 MHz, SPI, BGA, 24 引脚
(EN)
MICROCHIP
芯片, 闪存, 32MB, 9.6NS, 104MHZ, TBGA-24
(EN)
