产品分类：MOSFET驱动器,规格：工作温度最小值 -40°C,
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 8A输出, 13ns延迟, SON-6
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 7ns延迟, SOT-23-5
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, MSOP-8
(EN)TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, MSOP-8
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, MSOP-8
(EN)
TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SON-8
(EN)
STMICROELECTRONICS
驱动器, MOSFET, 高压侧, 4V-28V电源, 35μs延迟, SOIC-8
(EN)
STMICROELECTRONICS
驱动器, MOSFET, 高压侧, 4V-28V电源, 40μs延迟, POWERSSO-16
(EN)STMICROELECTRONICS
驱动器, MOSFET, 高压侧, 4V-28V电源, 40μs延迟, POWERSSO-16
(EN)STMICROELECTRONICS
驱动器, MOSFET, 高压侧, 4V-28V电源, 40μs延迟, POWERSSO-16
(EN)
STMICROELECTRONICS
双路电机芯片, 全桥, 5.5V-36V电源, 30A输出, 250μs延迟, SOIC-30
(EN)STMICROELECTRONICS
驱动器, MOSFET, 低压侧, 3.5V-5.5V电源, 12μs延迟, SOIC-8
(EN)
DIODES INC.
理想二极管替代, 5-15Vcc量程, 15ns关闭传播延迟, SOIC-8
(EN)DIODES INC.
门驱动器, MOSFET, 5V-15V电源, 20ns延迟, SOIC-8
(EN)
