产品分类：半导体 - 集成电路 (IC),规格：工作温度最高值 140°C,
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 8A输出, -999ms 延迟, SOT-23-6
(EN)
ON SEMICONDUCTOR
驱动器, MOSFET, 低压侧, 4.5V-20V电源, 5A输出, 20ns延迟, SOIC-8
(EN)ON SEMICONDUCTOR
芯片, 场效应管, MOSFET驱动器, 低压侧, NSOIC-8
(EN)TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 高压侧和低压侧, 10V-32V电源, 5A输出, 17ns延迟, SOT-23-6
(EN)
TEXAS INSTRUMENTS
芯片, MOSFET驱动器, 低压侧, 6-SOT-23
(EN)
TEXAS INSTRUMENTS
驱动器芯片, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SON-8
(EN)TEXAS INSTRUMENTS
门驱动器, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 13ns延迟, SOT-23-5
(EN)TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器芯片, 低压侧, 4.5V-18V电源, 8A输出, 13ns延迟, SOT-23-6
(EN)TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 4V-18V电源, 8A输出, 14ns延迟, SON-6
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 13ns延迟, SON-6
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 7ns延迟, SOT-23-5
(EN)TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)ANALOG DEVICES
可编程/可变增益放大器, 1 放大器, 1个放大器, 700 kHz, -40 °C, 140 °C, 2.7V 至 5.5V
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 7ns延迟, SOT-23-5
(EN)TEXAS INSTRUMENTS
MOSFET驱动器, 低压侧, 4.5V-18V电源, 4A和5ohm输出, SOT-23-5
TEXAS INSTRUMENTS
驱动器, MOSFET, 高压侧和低压侧, 8V-17V电源, 4A输出, 17ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 6ns延迟, DIP-8
(EN)TEXAS INSTRUMENTS
高压侧, 低压侧驱动器, 高压侧和低压侧, 8V-17V电源, 4A输出, 21ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, MSOP-8
(EN)
TEXAS INSTRUMENTS
DRIVER, IGBT MOSFET, 1 CHANNEL, 6-SOT-23
(EN)TEXAS INSTRUMENTS
驱动器芯片, MOSFET, 驱动器, 高压侧和低压侧, 8V-17V电源, 3A输出, 20ns延迟, SOIC-8
(EN)
ANALOG DEVICES
仪器放大器, 1个放大器, 12 μV, 1.2 V/μs, 1.5 MHz, 4.5V 至 5.5V, LFCSP
(EN)
