产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds 25V,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00186 ohm, 10 V, 1.65 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00525 ohm, 10 V, 1.8 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 60 A, 25 V, 0.00646 ohm, 10 V, 1.76 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00493 ohm, 10 V, 1.8 V
(EN)
VISHAY
N CHANNEL MOSFET, 25V, 50A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
N CHANNEL MOSFET, 25V, 60A, SON
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 56A, SON
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 64 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 49A, PQFN-5
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.5 mohm, 8 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.003 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 68 A, 25 V, 0.0038 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.002 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 25A, PQFN-8
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 20A, PQFN-5
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 25V, 35A TO-252AA
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)
