产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 15 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0135 ohm, 10 V, 1.66 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.9 A, 20 V, 0.013 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 16.7 A, 60 V, 0.044 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0024 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 80 V, 0.077 ohm, 10 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 75 V, 28 mohm, 5 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 0.003 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 60 V, 153 mohm, 5 V, 1.7 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 500 mA, 20 V, 0.99 ohm, 8 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 42 A, 150 V, 0.0372 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 60 V, 0.0037 ohm, 10 V, 3.1 V
(EN)
