产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.019Ω, -7.8A, MICROFET-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 40V, 28A, TO-252
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 27 A, 150 V, 0.041 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.9 A, 200 V, 0.059 ohm, 10 V, 2.9 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 20 V, 0.017 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.023 ohm, 5 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 72 mA, 350 V, 35 ohm, 0 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 15 mohm, 10 V, 4 V
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 19A, TO-252
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 600mA, SOT-416-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -30 V, 12 ohm, -4 V, -1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.3 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 3.5 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.0173OHM, 7.5A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.9 A, 20 V, 0.013 ohm, 4.5 V, 1 V
(EN)
