产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 110 mohm, -4.5 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.28 ohm, 10 V, 5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -60 V, 0.125 ohm, -10 V, -2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.2 ohm, 10 V, 3.75 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 10V, 18A TO-204AE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 790 mA, 250 V, 2 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 17 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 19.5A, POWERPAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 115mA SOT-23
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 500 V, 0.068 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 53 A, 500 V, 100 mohm, 10 V, 2.5 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 2.3A, TO-236, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 0.073 ohm, 10 V, 2.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V
(EN)
SOLID STATE
晶体管, MOSFET, MOSPOWER, N沟道, 900 mA, 90 V, 3 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0031 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.6 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 360 mA, 90 V, 3.2 ohm, 0 V
(EN)
