产品分类：MOSFET晶体管,规格：功耗 Pd 2W,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.2 A, 30 V, 0.015 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -100 V, 820 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, 3.4 A, -40 V, 112 mohm, 10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0077 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.031 ohm, -10 V, -1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.018 ohm, -10 V, -2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 5 A, 60 V, 0.034 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
(EN)ROHM
晶体管, MOSFET, 低电压, N沟道, 9 A, 30 V, 11 mohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.011 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.032 ohm, -10 V, -1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 1A SOT-223
(EN)
ADVANCED POWER ELECTRONICS CORP
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 5 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)
