产品分类：MOSFET晶体管,规格：晶体管封装类型 TO-220,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 196 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 85 A, 60 V, 10 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 320 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.8 A, 600 V, 0.255 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.244 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 140 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 2.1 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 650 V, 0.47 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.9 A, 900 V, 0.62 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 2.9 ohm, 10 V, 5.5 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 800V, 4A, TO-220
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 0.68 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 380 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10.5 A, 800 V, 750 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.38 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
(EN)
