The LM5111-1MY is a dual compound Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The driver can be operated in parallel with inputs and outputs connected to double the drive current capability.
Independently drives two N-channel MOSFETs
Compound CMOS and bipolar outputs reduce output current variation
Two channels can be connected in parallel to double the drive current
Independent inputs (TTL compatible)
Fast rise and fall time (14/12ns rise/fall with 2nF load)
Available in dual non-inverting, dual inverting and combination configurations
(EN)
