LM5113TME/NOPB - 

制造商：

TEXAS INSTRUMENTS TEXAS INSTRUMENTS

制造商产品编号：

LM5113TME/NOPB

仓库库存编号：

2492225

技术数据表：

(EN)

The LM5113TME/NOPB is a half-bridge Gate Driver designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-ON and turn-OFF strength independently. In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-ON during switching.

• Independent high-side and low-side TTL logic inputs
• Internal bootstrap supply voltage clamping
• Split outputs for adjustable
• turn-ON/turn-OFF strength
• Supply rail under-voltage lockout protection
• Low power consumption
• High-side floating bias voltage rail operates up to 100VDC
• 0.6/2.1R Pull-down/pull-up resistance
• 28ns Typical fast propagation time
• 1.5ns Typical excellent propagation delay matching

• Green product and no Sb/Br

参考价格及参考库存